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对采用阳极氧化法及阴极还原表面处理技术制备的性能稳定的纳米多孔硅,用原子力显微镜(AFM)表征了其微观结构,多孔硅颗粒粒径在30 nm左右。室温条件下测试了多孔硅场电子发射的特性,结果表明,多孔硅具有很好的场致发光性能,在5 V/μm的电场下就可以产生场发射电流。多孔硅的开启电压在1 000 V左右,发射电流随着电压的增大而不断增大,发射电压在2 000 V以上。
The nanosized porous silicon with stable properties prepared by anodic oxidation and cathodic reduction surface treatment was characterized by atomic force microscopy (AFM). The size of porous silicon particles was about 30 nm. The electron emission properties of porous silicon field were tested at room temperature. The results show that porous silicon has good electroluminescence properties and can generate field emission current under the electric field of 5 V / μm. The starting voltage of porous silicon is about 1 000 V, and the emission current increases with the increase of voltage, and the emission voltage is above 2 000 V.