继2005年初利用拉曼效应或稀土掺杂硅的激光实验之后,美国Brown大学的Jimmy Xu小组首次成功观察到了纳米结构硅的激光输出。该小组在SOI晶片表面覆盖掩模,利用离子折射刻蚀法在其表面刻蚀出10亿多个纳米微孔(60nm宽)。然后将晶片冷却至低温(10K),以氩离子激光器输出的1．5W绿光抽运,观察到了红外激光计数。当抽运光功率增大时, Following the laser experiments using Raman effect or rare earth doped silicon in early 2005, the Jimmy Xu team at Brown University in the USA successfully observed the laser output of nanostructured silicon for the first time. The team covered the surface of the SOI wafer with a mask that etched more than 1 billion nanopores (60 nm wide) on its surface using ion-refractive lithography. The wafer was then cooled to low temperature (10K) and pumped at 1.5W green with an argon ion laser to observe the infrared laser count. When pumping light power increases,