研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时 ,从X射线衍射谱 (XRD)和光致发光谱 (PL)中可见 ,ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明 ,Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。 The effects of annealing as a buffer layer on the quality of ZnSe films grown on Si substrates at different annealing times and annealing temperatures were investigated. When the annealing conditions of the Si (111) substrate sputtered with ZnO film are changed, the crystalline quality of the ZnSe (111) film is greatly changed from the X-ray diffraction (XRD) and the photoluminescence (PL) . The variable temperature PL spectra show that the near-band edge of the ZnSe film with ZnO buffer grown on the Si substrate originates from free exciton emission.