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本文利用高分辨电子显微镜(TEM)从原子尺度对MOCVD生长的ZnSe_(1-x)S_x-Znse应变超晶格的精细结构进行了细致观察.通过对缺陷的种类、分布的分析提出缺陷的产生原因与过渡层质量有直接关系,通过改善过渡层的成份及各层间的厚度可制备出结构较完整以及较平整的超晶格薄层材料.
In this paper, the fine structure of ZnSe_ (1-x) S_x-Znse strained superlattice grown from MOCVD on atomic scale was carefully observed by high resolution electron microscope (TEM), and defects were produced by analyzing the types and distribution of defects The reason is directly related to the quality of the transitional layer. By improving the composition of the transitional layer and the thickness of each layer, a more complete and relatively flat superlattice sheet material can be prepared.