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本文报导了用四氯化碳作为氯源的掺氯氧化方法。测量了 CCl_4氧化物的性质,并与干氧氧化物进行比较。实验结果表明,其氧化速率和腐蚀速率有所增加,界面有效电荷和界面态密度都显著减少,并有可能提高氧化物的击穿强度。对于 CCl_4氧化物的这些性质的机理也进行了讨论。此外还指出 CCl4氧化物和其它掺氯氧化物一样都有负偏压不稳定性现象。
This paper reports on the chlorine-doped oxidation method using carbon tetrachloride as a chlorine source. The properties of CCl 4 oxides were measured and compared with dry oxy-oxides. Experimental results show that the oxidation rate and the corrosion rate increase, the effective interface charge density and interface state density are significantly reduced, and may improve the breakdown strength of the oxide. The mechanism of these properties of CCl 4 oxides is also discussed. In addition, it is pointed out that CCl4 oxide has the same negative bias instability as other doped oxides.