论文部分内容阅读
采用微波功率管二次发射极镇流和掺砷多晶硅发射极覆盖树枝状结构等新工艺技术，研制出用于工程的实用化P波段脉冲大功率晶体管。该器件由16个单胞内匹配而成，在该频带内，脉宽500μs，占空比15％，脉冲输出150W，增益大于10dB，集电极效率大于50％。
The microwave power tube secondary emitter ballast and doped arsenic polycrystalline silicon emitter covering dendritic structure and other new technology, developed for the practical P-band pulse high-power transistor. The device is composed of 16 single-cell intracavity matching. In this band, the pulse width is 500μs, the duty cycle is 15%, the pulse output is 150W, the gain is more than 10dB, and the collector efficiency is more than 50%.