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本文概述了我们最新引进的英国VG公司制造的V80H型分子束外延（MBE）设备的技术特点和性能，主要介绍了我们利用这套设备所进行的半导体激光器材料的生长研究工作。
This article provides an overview of the technical features and performance of our newly introduced V80H molecular beam epitaxy (MBE) equipment manufactured by VG, UK, and highlights our research work on the growth of semiconductor laser materials using this equipment.