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提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法．用该法得出的结果同 透射电子显微镜（ＴＥＭ）的实测统计结果符合较好，平均偏差小于１５％．给出了基于多晶硅电阻电流温度关系实 测曲线得出的晶粒边界激活能．结果显示：经 Ｈ２ 气氛、４５０℃、３０ ｍｉｎ退火的样品，其激活能高于未退火的．
A method of determining the number of grains and the average grain length of polysilicon resistance based on the measured volt-ampere characteristics is proposed. The results obtained by this method are in good agreement with the measured results of transmission electron microscopy (TEM), and the average deviation is less than 15%. The activation energy of the grain boundaries based on the measured curves of the temperature dependence of polysilicon resistance current is given. The results showed that the activation energy of the sample annealed at 450 ℃ for 30 min in the H2 atmosphere was higher than that of the unannealed sample.