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报道了在GaN表面以Ni纳米岛结构作为模板,利用电感耦合等离子(ICP)刻蚀制备GaN纳米柱的研究结果。原子力显微镜(AFM)测试结果表明,金属Ni薄膜在快速热退火(RTA)作用下形成了平均直径和高度大约分别为325 nm和70 nm的纳米岛状结构。通过电子扫描显微镜(SEM)照片看出,以GaN表面所形成的Ni纳米岛作为模板图形,通过控制ICP刻蚀时间,在一定的刻蚀时间内(2 min)获得有序的并拥有半极性晶面的GaN纳米柱阵列。这种新颖的半极性GaN纳米柱作为氮化物量子阱或者超晶格结构的生长模板,可以有效减小甚至消除极化效应,提高光电子器件的效率和性能。
Reported the results of the research on the preparation of GaN nanorods by inductively coupled plasma (ICP) etching on the GaN surface using Ni nano-island structure as a template. Atomic Force Microscope (AFM) test results show that the metal Ni thin films form nano-islands with average diameter and height of about 325 nm and 70 nm respectively under the rapid thermal annealing (RTA). It can be seen from the scanning electron microscopic (SEM) images that the Ni nano-islands formed on the GaN surface are used as template patterns and the ICP etching time is controlled to obtain ordered and half-polar Sexual crystal facets of GaN nanocolumn arrays. The novel semipolar GaN nanocolumns, as growth templates for nitride quantum wells or superlattice structures, can effectively reduce or even eliminate polarization effects and improve the efficiency and performance of optoelectronic devices.