报道了用半绝缘GaAs光电导开关产生电压幅值稳定、ps量级时间晃动超快电脉冲的实验结果 .分别用ns ,ps和fs激光脉冲触发GaAs光电导开关的结果表明 ,在低电场偏置下 ,电极间隙为 1mm的GaAs光电导开关可以产生触发时间晃动小于 1 0ps、电压幅值变化小于 1 2 %、亚ns量级脉冲宽度的稳定超短电脉冲 .分析了触发光脉冲能量起伏对光电导开关产生超快电脉冲电压幅值的影响 ,指出通过控制光电导开关的触发条件和对开关的优化设计 ,就可以获得电压幅值稳定、时间晃动在ps量级的超快电脉冲 The experimental results of using stable GaAs photoconductive switch with semi-insulating GaAs photoconductive switch to generate ultra-fast electrical pulses with ps order of magnitude are reported.The results of GaAs photoconductive switches triggered by ns, ps and fs laser pulses show that at low electric field The GaAs photoconductive switch with 1mm electrode gap can produce a stable ultrashort electrical pulse whose triggering time is less than 10ps and its voltage amplitude is less than 12% with sub-ns pulse width. The influence of photoconductive switch on ultrafast pulse voltage amplitude is pointed out. By controlling the trigger condition of photoconductive switch and the optimal design of the switch, it is possible to obtain an ultrafast pulse with stable voltage amplitude and time fluctuation in ps order