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采用中频孪生靶非平衡磁控溅射技术在AZ31镁合金基底上制备出氮化硅薄膜。利用傅里叶变换红外光谱仪、电子探针、X射线衍射仪等研究了氮气流量比率对氮化硅薄膜的成分、微观结构的影响。通过对薄膜力学性能和抗腐蚀性能的检测分析了氮化硅薄膜对AZ31镁合金基底表面改性的作用。结果表明:中频孪生非平衡磁控溅射技术制备的薄膜为非晶态富N氮化硅。随着氮气流量比率的增加,薄膜的沉积速率降低,Si含量减少。在AZ31镁合金基底上制备氮化硅薄膜有效提高了基底的力学性能和抗腐蚀性能,显微硬度得到显著提高,腐蚀电流密度降低了3个数量级,并且薄膜与基底之间的结合力良好。
A thin film of silicon nitride was deposited on the AZ31 magnesium alloy by IF twin-target unbalanced magnetron sputtering. The effect of nitrogen flow rate on the composition and microstructure of Si3N4 thin films was investigated by Fourier transform infrared spectroscopy, electron probe and X-ray diffraction. The effect of silicon nitride film on the surface modification of AZ31 magnesium alloy substrate was analyzed by measuring the mechanical properties and corrosion resistance of the film. The results show that the films prepared by IF twin-magnetization sputtering are amorphous N-rich silicon nitride. As the nitrogen flow rate increases, the deposition rate of the film decreases and the Si content decreases. Preparation of silicon nitride film on AZ31 magnesium alloy substrate effectively improves the mechanical properties and corrosion resistance of the substrate, the microhardness is significantly improved, the corrosion current density is reduced by 3 orders of magnitude, and the bonding force between the film and the substrate is good.