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本文主要研究高剂量氧离子 (1 4～ 2 5× 10 1 8/cm2 )注入Si (10 0 )中 ,形成SOI SIMOX材料的表面Si单晶薄层的电学性能。用扩展电阻和霍耳测量 ,研究了不同的注入条件和退火条件对表面Si单晶层的载流子度和迁移率的影响。
In this paper, the high-dose oxygen ions (1 4 ~ 2 5 × 10 18 / cm 2) were implanted into Si (100) to form the electrical properties of the surface Si single crystal thin films of SOI SIMOX materials. The effects of different implantation conditions and annealing conditions on the carrier mobility and mobility of the surface Si single crystal layer were investigated by extended resistance and Hall measurement.