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在研究低能电子束照射绝缘物时在二次电子返回特性的基础上 ,通过绝缘物表面照射微区和衬底之间的有效电容 ,获得了表面电位和二次电子信号电流在表面电荷积累过渡过程中随照射条件的变化关系 ,建立了电子束照射覆盖有绝缘膜的 IC芯片时形成静态电容衬度的理论模型 .从理论上分析了电子束照射条件和芯片内部形貌、材料参数对静态电容衬度的影响 ,解释了在扫描电镜实验中的最大衬度现象及其对应的最佳电子照射条件
In the study of low-energy electron beam irradiation on the basis of the second electron electron return characteristics of the insulator, irradiated by the effective area between the micro-area and the substrate, the surface potential and secondary electron signal current in the surface charge accumulation transition The theoretical model of the formation of static capacitance contrast when forming an IC chip covered with an insulating film by electron beam irradiation is established.Analyzed the electron beam irradiation conditions and the internal morphology of the chip and the effect of material parameters on the static Capacitance of the contrast, explained the SEM in the experiment of the largest contrast phenomenon and its corresponding best electron irradiation conditions