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为了应用于场发射显示器,采用电化学阳极氧化,快速热氧化和磁控溅射等方法制备出了金属/多孔硅/硅基底/金属结构的多孔硅电子发射体,并运用扫描电子显微镜观察了多孔硅的微观形貌,结果发现多孔硅的孔径随着电化学阳极氧化电流密度的增加而增加,多孔硅层的厚度随着阳极氧化电流密度和时间乘积的增加而增加。在真空系统中测量了多孔硅的电子发射特性,电子发射的阈值电压Vth随着多孔硅层厚度的增加而增加;最大的发射效率η为7.5‰,此效率出现在孔径6~16 nm,多孔硅层厚度为11.06μm的样品中,对应的器件电压Vps为30V。
For application in field emission displays, porous silicon electron emitters with metal / porous silicon / silicon substrate / metal structure were prepared by electrochemical anodic oxidation, rapid thermal oxidation and magnetron sputtering. The scanning electron microscopy The results showed that the pore size of porous silicon increased with the increase of electrochemical anodic oxidation current density, and the thickness of porous silicon layer increased with the increase of anodic oxidation current density and time product. The electron emission characteristics of porous silicon were measured in a vacuum system. The threshold voltage Vth of electron emission increased with the increase of the thickness of the porous silicon layer. The maximum emission efficiency η was 7.5 ‰, and the efficiency appeared in the pore size of 6-16 nm. In the sample with a silicon layer thickness of 11.06 μm, the corresponding device voltage Vps is 30V.