论文部分内容阅读
,A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration
【作 者】
：
【机 构】
：
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2012年6期
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