在推导出的一般复式格子的π电子紧束缚能量色散关系的基础上,通过假定石墨烯纳米带的电子横向限制势为无穷大硬壁势,导出石墨烯纳米带的能量色散关系及石墨烯纳米带或为金属或为半导体的条件.结果表明:石墨烯纳米带的电子结构与其几何构型(对称性及宽度)密切相关,所以通过控制几何构型,可将其调制成金属或不同带隙的半导体.这意味着石墨烯纳米带对于发展新型纳米器件具有重要意义. On the basis of deduced π-electron tight binding energy dispersion of general complex lattices, the energy dispersive relation of graphene nanoribbons and graphene nanoribbons are deduced by assuming that the electron transverse confinement potential of graphene nanoribbons is an infinite hard-wall potential Or metal or semiconductor.The results show that the electronic structure of graphene nanoribbons is closely related to the geometry (symmetry and width) of the graphene nanoribbons. Therefore, by controlling the geometric configuration, it can be modulated into metal or different bandgap This means that graphene nanoribbons are of great importance for the development of novel nanodevices.