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采用GaAs标准高电子迁移率晶体管(HEMT)工艺设计了一种低噪声放大器。放大器由4级4指双栅槽结构HEMT器件级联构成。0.25μm栅线条的选用保证器件有低的噪声系数和较高的增益。通过在HEMT的源极串联电感和选择MIM电容微带线实现了放大器输入级、中间级、输出级之间的最佳匹配网络。芯片测试结果表明,所设计低噪声反放大器在34 GHz频率下的小信号增益大于22 dB,噪声系数小于1.8 dB,具有10 dBm的饱和输出功率且线性度较好。该设计方法实现了低噪声、高增益、低功耗放大器的性能要求。
A low noise amplifier is designed using GaAs standard high electron mobility transistor (HEMT) technology. The amplifier consists of four 4-finger dual-gate HEMT cascades. The choice of 0.25μm gate line ensures low noise figure and high gain of the device. By matching the source series inductance of the HEMT and selecting the MIM capacitor microstrip line, an optimal matching network between the amplifier input stage, the middle stage and the output stage is achieved. Chip test results show that the designed low noise amplifier has a small signal gain of more than 22 dB at 34 GHz, a noise figure of less than 1.8 dB, a saturated output power of 10 dBm and good linearity. This design method has realized the performance requirement of the low noise, high gain, low power amplifier.