采用分子束外延(MBE)法在GaSb衬底上生长了不同组分的InAsSb外延膜。通过引入Al GaSb插层,实现对导电GaSb衬底上InAsSb材料电学性质的定性表征,并研究了生长温度和晶格失配对InAsSb外延层电学性能的影响。测试结果表明,在较低生长温度下获得的样品表面会形成缺陷,且其电学性能较差。对于一定晶格失配的样品,提高生长温度能获得较好的电学性能。 Different composition InAsSb epitaxial films were grown on GaSb substrate by molecular beam epitaxy (MBE). By introducing Al GaSb intercalation, the qualitative characterization of the electrical properties of InAsSb on GaSb substrate was investigated. The effect of growth temperature and lattice mismatch on the electrical properties of InAsSb epitaxial layer was also studied. The test results show that the surface of the sample obtained at a lower growth temperature will form defects and its electrical properties are poor. For a certain lattice mismatch samples, improve the growth temperature can get better electrical properties.