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本文在800—1200℃的温度范围内,对LPCVD生长的未掺杂和重磷掺杂的多晶硅薄膜进行了干氧氧化特性的系统研究,并与轻掺杂和重磷掺杂的单晶硅的热氧化规律进行了比较.发现在900℃以下时,未掺杂多晶硅氧化规律不能完全用Deal-Grove模型描述,并存在着一个快速氧化的特征阶段.在这个阶段中多晶硅氧化速率比<111>单晶快,而重磷掺杂多晶硅却相反.掺杂、未掺杂,单晶、多晶间氧化规律的差异,在T=1200℃时,全部消失.本文讨论了产生上述现象的物理机理.
In this paper, we systematically studied the properties of dry-oxygen oxidation of undoped and heavy-phosphorus-doped polycrystalline silicon films grown on LPCVD in the temperature range of 800-1200 ℃, The results show that the oxidation regularity of undoped polycrystalline silicon can not be completely described by the Deal-Grove model at 900 ℃, and there is a characteristic phase of rapid oxidation, in which the polycrystalline silicon oxidation rate is lower than <111 > Polycrystalline silicon is fast, while the polyphosphoric doped polycrystalline silicon is the opposite.Divided, undoped, monocrystalline, polycrystalline oxidation between the law, T = 1200 ° C, all disappear.This paper discusses the physical mechanism.