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Intel和另一家顶级器件制造商正在研究使用(110)晶向的硅片衬底来提高pMOS的迁移率。在2008年的国际电子器件会议(IEDM)上,Intel的32nm器件经理Paul Packan表示:Intel在(110)晶
Intel and another top device manufacturer are investigating the use of (110) orientation wafer substrates to increase pMOS mobility. At the 2008 International Electronic Devices Conference (IEDM), Intel’s 32nm device manager Paul Packan said: