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利用不同功函数的金属作为接触电极,研究了网络状碳纳米管薄膜晶体管(CNT-TFT)的接触电阻效应。研究表明金属Pd与碳纳米管薄膜形成良好的欧姆接触,Au则形成近欧姆接触,这两种接触的器件的开态电流和迁移率较高。Ti和Al都与碳纳米管薄膜形成肖特基接触,且Al接触比Ti接触的势垒更高,接触电阻也更大,相应器件的开态电流和迁移率都较低。该结果表明对于CNT-TFT仍然可以通过接触来调控器件的性能,这对CNT-TFT的实用化进程具有重要的促进作用。
Using the metal with different work functions as the contact electrode, the contact resistance effect of the networked carbon nanotube thin film transistor (CNT-TFT) was investigated. The results show that the metal Pd forms a good ohmic contact with the carbon nanotube film while the Au forms the near-ohmic contact, and the device with the two contacts has higher on-state current and mobility. Both Ti and Al form Schottky contact with the carbon nanotube film, and the contact of Al contact with Ti is higher than that of Ti, and the contact resistance is also larger, and the on-state current and mobility of the device are lower. The results show that CNT-TFT can still regulate the performance of the device through contact, which has an important role in the practical application of CNT-TFT.