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In this paper, we present a high-efficiency S-band gallium nitride(GaN) power amplifier(PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor(HEMT) with 10 mm gate width on SiC substrate.Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm(～70 W)with a power-added efficiency(PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8–2.2 GHz(20% relative bandwidth), the amplifier provides an output power higher than 48 dBm(～ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave(CW) operating conditions, the amplifier gives an output power over46 dBm(40 W) with PAE beyond 60% over the whole operation frequency range.
In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self- developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the second harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~ 70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. (40 W) with PAE beyond 60% over the whole operation frequ ency range.