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研发了一种无氧化剂无抑制剂的新型碱性TSV精抛液,通过单因素实验确定FA/OⅠ型非离子表面活性剂和有机胺碱的体积分数,以使Cu/Ti/Si O2的去除速率满足选择比。根据表面活性剂的优先吸附理论来降低碟形坑内部反应界面的能量,同时运用大分子有机胺碱的自钝化原理来控制碟形坑的延伸,使用HP&MP&LP工作压力模式来解决通孔边界处的塌边问题。结果表明:当抛光液中FA/OⅠ型非离子表面活性剂和大分子有机胺碱的体积分数分别为3%和1.5%时对Cu/Ti/Si O2的选择性最好。用优化后的抛光液在TSV图形片上进行了测试并比较了不同通孔间距下碟形坑的修正能力。台阶仪检测结果显示,优化后的抛光液对碟形坑的修正能力为1500~2000?/min,且对间距分别为20μm、40μm、60μm和80μm的四种通孔内碟形坑的修正能力均在1500?/min以上,当HP&MP&LP模式中三个阶段的持续时间分别为总抛光时间的50%、30%和20%时塌边现象得到解决。
A novel non-oxidant-free alkaline TSV polishing solution was developed to determine the volume fraction of FA / O I nonionic surfactant and organic amine base by single factor experiments so that the removal of Cu / Ti / Si O2 The rate satisfies the choice ratio. According to the principle of preferential adsorption of surfactants, the energy of the reaction interface inside the pits is reduced. At the same time, the self-passivation principle of macromolecular organic amine base is used to control the extending of the pits. The working pressure mode of HP & MP & LP is used to solve the problem of vias The problem of falling edge. The results show that the selectivity of Cu / Ti / Si O2 is best when the volume fraction of FA / O Ⅰ nonionic surfactant and macromolecular organic amine base are 3% and 1.5% respectively. The optimized polishing solution was tested on TSV graphic plates and the correction ability of the dimples at different through-hole spacings was compared. The results of the step tester show that the optimized polishing liquid has a correction capacity of 1500-2000 Å / min for the dished pits and the correction capability of the dished pits in the four through-holes with the spacings of 20 μm, 40 μm, 60 μm and 80 μm, respectively All above 1500? / Min, and the collapse phenomenon was solved when the durations of the three stages in the HP & MP & LP mode were respectively 50%, 30% and 20% of the total polishing time.