Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-st

来源 :稀有金属：英文版 | 被引量 : 0次 | 上传用户：LAJIFIFI

【摘要】

：

有 4.8 μm 的截止波长的 InAsSb epilayers 被一步舞液体阶段取向附生(LPE ) 成功地在 InAs 底层上种了技术。epilayers 被 X 光检查衍射(XRD ) 描绘， Fourier 变换红外

【作者】

：

GAO Yuzhu GONG Xiuying FANG We

【机构】

：

CollegeofElectronicsandInformationEngineering,ShanghaiInstituteofTechnicalPhysics,ShizuokaUniversity

【出处】

：

稀有金属：英文版

【发表日期】

：

2009年4期

【关键词】

：

INASSB 液相外延截止波长扫描电子显微镜编写生长条件傅立叶变换射线衍射 InAsSb liquid phase epitaxy crysta

【基金项目】

：

The authors acknowledge the financial assistance provided by the National Natural Science Foundation of China （No. 60777022） and the Program for Young Excellent Talents in Tongji University.

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论文部分内容阅读

有 4.8 μm 的截止波长的 InAsSb epilayers 被一步舞液体阶段取向附生(LPE ) 成功地在 InAs 底层上种了技术。epilayers 被 X 光检查衍射(XRD ) 描绘， Fourier 变换红外线(FTIR ) 发射度大小和扫描电子显微镜学(SEM ) 。材料的光、结构的性质上的不同生长条件的影响被学习。结果表明好水晶的质量，光滑的表面和公寓 InAsSb epilayers 连接的镜子被完成。他们得益于优化生长条件，即，生长的足够的同质融化并且很慢的冷却率

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Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-st

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