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本文报道了新型全脉冲电路气体-金属复合离子注入源的结构和特性,采用在磁场约束条件下的脉冲引发的气体等离子体,分别引发气体放电和金属弧放电。详细描述放电过程的伏-安特性曲线,以及对引出离子束流的作用。该设备电路体积小,整体高压脉冲电源体积仅为40立方分米,外引的操作线电压低于600V,使用安全;具有单独气体离子注入,和金属离子注入的功能,适合于材料表面改性用途。
In this paper, the structure and characteristics of a gas-metal ion implantation source for a new all-impulse circuit are reported. The gas plasma induced by the pulse under the magnetic field confinement condition is used to initiate the gas discharge and the metal arc discharge, respectively. Describe in detail the volt-ampere characteristics of the discharge process and its effect on the ion beam extraction. The device circuit is small in size, the overall high-voltage pulse power supply volume of only 40 cubic decimeters, the introduction of the operating line voltage is lower than 600V, safe to use; with separate gas ion implantation, and metal ion implantation function, suitable for surface modification of materials use.