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采用直流磁控溅射法在（１１０）ＬａＡｌＯ３单晶基片上制备了Ｌａ０．６７Ｓｒ０．３３ＭｎＯ３－δ外延膜，系统地研究了样品的结构以及基片温度、外磁场对磁电阻效应的影响．将ＬＳＭＯ／（１１０）系列样品与ＬＳＭＯ／（００１）系列样品的电阻率对比之后，发现基片的不同取向对该系列样品的电输运性质有很大的影响．原因是在不同取向时，氧原子进入薄膜的几率不同，导致Ｍｎ＋３／Ｍｎ＋４的比率不同，使得晶格常数、Ｍｎ＋３和Ｍｎ＋４与Ｏ－２之间的相互作用和原子磁矩的取向发生了变化，从而引起了金属到半导体的转变温度Ｔｐ移向高温区域和电阻率明显下降．
The La0.67Sr0.33MnO3-δ epitaxial film was prepared on (110) LaAlO3 single crystal substrate by DC magnetron sputtering. The structure of the sample and the influence of substrate temperature and external magnetic field on the magnetoresistance effect were systematically studied. After comparing the resistivity of the LSMO / (110) series samples with the LSMO / (001) series samples, it was found that the different orientations of the substrates have a great influence on the electrical transport properties of the series of samples. The reason is that at different orientations, the probability of oxygen atoms entering into the film is different, resulting in different ratios of Mn + 3 / Mn + 4, so that the lattice constant, the interaction between Mn + 3 and Mn + 4 and O-2 and the orientation of the atomic magnetic moment have changed, Thereby causing the metal-to-semiconductor transition temperature Tp to move toward a high temperature region and a significant drop in resistivity.