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为了分析干法刻蚀对应变多量子阱(SMQWs)发光特性的影响,采用感应耦合等离子体(ICP)刻蚀技术对金属有机物化学气相沉积(MOCVD)生长的InGaN/AIGaN应变多量子阱覆盖层表面刻蚀了约95 nm。通过光致发光(PL)特性表征发现,干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。干法刻蚀后,量子阱表面呈现高低起伏状形貌,粗糙度提高,出射光在起伏状粗糙形貌表面反复散射,从而逃逸概率增大,有助于光致发光强度增强。理论计算结果得出表面形貌变化引起的量子阱光致发光强度增强因子约为1．3倍。另外,由于所采用的感应耦合等离子体功率较小,刻蚀损伤深度几乎不会达到量子阱阱层,然而干法刻蚀过程中Ar离子隧穿到量子阱阱层内部可能形成新的发光中心,从而使量子阱的发光强度得到提高。
In order to analyze the influence of dry etching on the luminescence properties of the multi-quantum well (SMQWs), the InGaN / AIGaN multi-quantum well growth layer grown by metal organic chemical vapor deposition (MOCVD) The surface is etched by about 95 nm. It was found by photoluminescence (PL) characterization that the photoluminescence intensity of the quantum well after dry etching is nearly 3 times higher than that of the unetched quantum well. After dry etching, the surface of the quantum well presents high and low undulating morphology, the roughness increases, and the emergent light scatters repeatedly on the surface of undulating rough morphology, thereby increasing the escape probability and helping the photoluminescence intensity to be enhanced. The theoretical calculation results show that the enhancement factor of photoluminescence intensity of quantum wells caused by the change of surface topography is about 1.3 times. In addition, due to the smaller inductively coupled plasma power used, the depth of the etch damage hardly reaches that of the quantum well layer. However, during the dry etching process, Ar ions tunnel into the quantum well layer to form a new luminescent center , So that the quantum well luminous intensity is improved.