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系统研究了 H2 流量和 H+原位处理 Cx H1-x薄膜的时间对 Cx H1-x薄膜的稳定时间、表面悬挂键密度和表面电子局域化程度的影响 ,表明 Cx H1-x薄膜的长时间 H+ 原位处理是减小 Cx H1-x薄膜表面悬挂键密度的有效途径。
The effects of H2 flow rate and the time of H + treatment of Cx H1-x film on the stabilization time, surface dangling bond density and surface electron localization of Cx H1-x thin films were systematically investigated. It is shown that the long time H + in-situ treatment is an effective way to reduce the surface dangling bond density of Cx H1-x thin films.