论文部分内容阅读
A backside illuminated mesa-structure In Ga As/In P modified uni-traveling-carrier photodiode(MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-d B cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-d B compression point is measured to be 54 m A at 25 GHz, with a corresponding output radio frequency(RF) power of up to 15.5 d Bm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.
A backside illuminated mesa-structure In Ga As / In P modified uni-traveling-carrier photodiode (MUTC-PD) with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the The maximum responsivity at 1.55 μm is 0.5 A / W, and the 3-d B cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-d B compression point is measured to be 54 m A at 25 GHz with a corresponding output radio frequency (RF) power of up to 15.5 d Bm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon