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通用电气公司的研究人员生产了一种新型的对红外辐射特别敏感的金属绝缘半导体(MIS)电容器。所用的材料是对3-5μm波段辐射敏感的锑化铟(Insb)。新的电容器将主要用在军用被动监视和探测设备中。这种器件利用电荷的积累和转移原理,因此有时也称为电荷注射器件(CIDS)。器件尺寸为2.9mm×8mm,由1024对MIS组成,分为16列,每列64个电容器,每个电容器就
Researchers at General Electric Corp. have produced a new type of metal-insulated semiconductor (MIS) capacitor that is particularly sensitive to infrared radiation. The material used is Insb, which is radiation sensitive to the 3-5 μm band. The new capacitor will mainly be used in military passive monitoring and detection equipment. Such devices make use of the principle of charge accumulation and transfer and are therefore sometimes referred to as charge injection devices (CIDS). The device size is 2.9mm × 8mm and consists of 1024 pairs of MIS, divided into 16 columns with 64 capacitors in each column. Each capacitor is