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以往对SOI器件的建模基本上基于漂移区全耗尽的假设,且大多未考虑场板对表面势场分布的影响。通过分区求解二维泊松方程,建立了场板SOI RESURF LDMOS表面电势和表面电场分布解析模型。该模型同时考虑了栅场板和漏场板的作用,既适用于漂移区全耗尽的情况,也适用于漂移区不全耗尽的情况。利用此模型和半导体器件仿真工具Silvaco,详细探讨了器件在不同偏压下栅场板和漏场板对漂移区表面电势和电场分布的影响。解析模型结果与数值仿真结果吻合良好,验证了模型的准确性。
In the past, the modeling of SOI devices was basically based on the assumption that the drift region was completely depleted, and most of them did not consider the influence of the field plate on the surface potential distribution. By partitioning the two-dimensional Poisson’s equation, the analytic model of the surface potential and surface electric field distribution of SOI RESURF LDMOS is established. The model also considers the function of the gate field plate and the drain field plate, and is suitable for both the fully depleted drift region and the fully depleted drift region. Using this model and Silvaco, a semiconductor device simulation tool, the influence of the gate and drain fields on the surface potential and electric field distribution of the drift region under different bias voltages is discussed in detail. The analytical model results agree well with the numerical simulation results, which verify the accuracy of the model.