采用 0 .35 μm CMOS工艺 ,实现了一个 5 0 0 MHz、32× 32 bit的高速五端口寄存器堆 .它可以同时进行二个写操作和三个读操作 ,并且在同一时钟周期完成先写后读 .在电流工作方式下 ,通过设计优化的存储单元、新型高速电流灵敏放大器以及一种灵敏放大器控制信号产生电路 ,提高了寄存器堆的读取速度 .另外还采用了 TSPC(truesingle- phase clock) - D触发器等高速技术来进一步加快读取速度 ,电路仿真结果表明该寄存器堆的读取时间为1.85 ns. A 0.50 μm, 32 × 32 bit high-speed five-port register file is implemented in a 0.35 μm CMOS process, allowing two write operations and three read operations simultaneously, with the first write after the same clock cycle In the current mode of operation, the register bank is read faster through the design of an optimized memory cell, a new high-speed current-sense amplifier, and a sense amplifier control signal generation circuit, as well as a TSPC (truesingle-phase clock) - D flip-flop and other high-speed technology to further speed up the read, the circuit simulation results show that the register file read time 1.85 ns.