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本文利用μ-PCD载流子寿命测量系统,对采用MBE方法生长的Hg空位型中波HgCdTe P型材料和原位As掺杂激活中波P型材料的少子寿命进行了测量,并对材料的少子寿命与温度、载流子浓度的依赖关系进行了研究。结果发现,Hg空位型HgCdTe材料,在非本征区范围内,SRH再结合机制起主要作用;在本征区域,Auger再结合和Radiative再结合机制起主要作用。通过拟和得到,低温下作为SRH再结合中心的汞空位能级位置在离价带顶30meV处,有着类受主的性质,起库仑吸引作用,限制了材料的少子寿命。As掺杂P型材料的少子寿命与同载流子浓度Hg空位为主的P型材料少子寿命相比,大了一个数量级。这就决定了As掺杂P型材料制成的红外探测器件比Hg空位P型材料的探测率高,因此这种材料更适合做多色红外焦平面列阵探测器。
In this paper, we use the μ-PCD carrier lifetime measurement system to measure the minority carrier lifetime of the Hg vacancy-type HgCdTe P-type material and the in-situ As-doped mid-wave P-type material grown by the MBE method. The relationship between the life of juveniles and temperature and carrier concentration was studied. It is found that the Hg vacancy-type HgCdTe material plays a major role in the SRH recombination mechanism in the extrinsic region, and Auger recombination and the Radiative recombination mechanism in the intrinsic region. By fitting, the position of Hg vacancy energy level as SRH recombination center at low temperature has the class acceptor property at the distance of 30meV from the top of the valence band, which plays the role of Coulomb attraction and limits the life expectancy of the minority of materials. The as-doped P-type materials have an order of magnitude larger lifetime than the P-type materials with fewer Hg vacancies. This determines the As-doped P-type material made of infrared detection device Hg gap P-type material than the detection rate, so this material is more suitable for multi-color infrared focal plane array detector.