We fabricate Sm-doped Ca3Co4O9+δ(CCO)bulk materials in magnetic field during both processes of chemical synthesis and cold pressing.The structure and electrica
The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing
Floquet engineering appears as a new protocol for designing topological states of matter,and features anomalous edge modes pinned at quasi-energy π/T with vani
Structural,elastic,electronic and optical properties of the Pt3Zr intermetallic compound are investigated using first principles calculations based on the densi
The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes(LEDs)grown on silicon subs