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本文用解析方法找出了具有横向结构和深结的功率MOSFET漂移区中的电场分布。从这个分析出发,推导出了能取得最小串联电阻并保证有一定结击穿电压的偏置栅功率MOSFET中漂移区的最佳均匀表面掺杂浓度和掺杂深度。提出了这类MOSFET的设计规则。同计算机模拟的结果进行了比较,结果表明,这些结论对某些实际结构是合理的。
In this paper, the analytic method is used to find out the electric field distribution in the drift region of the power MOSFET with lateral structure and deep junction. From this analysis, we derive the best uniform surface doping concentration and doping depth of the drift region in the bias gate power MOSFET that can achieve the lowest series resistance and ensure a certain junction breakdown voltage. The design rules for such MOSFETs are proposed. Compared with the results of computer simulation, the results show that these conclusions are reasonable for some practical structures.