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使用金属有机气相沉积(MOCVD)设备在4英寸(1英寸=2.54 cm)半绝缘SiC衬底上进行了GaN HEMT结构材料的生长。GaN外延材料(002)和(102)面X射线摇摆曲线半高宽分别为166和238 arcsec,表面粗糙度(Rms)(5μm×5μm)达到0.174 nm,表明GaN外延材料具有较好的晶体质量。另外,喇曼测试发现整个4英寸GaN外延材料应力分布比较均匀,与3英寸GaN外延材料相比应力没有增加。通过非接触霍尔测得GaN HEMT结构材料二维电子气的迁移率达到2 153 cm2/(V.s)、面密度为9.49×1012 cm-2,方块电阻相对标准偏差1.1%,表现出良好的电学性能和均匀性。
Growth of GaN HEMT structure material was performed on a 4 inch (1 inch = 2.54 cm) semi-insulating SiC substrate using a metal organic vapor deposition (MOCVD) apparatus. The full width at half maximum of the X-ray rocking curves of (002) and (102) are 166 and 238 arcsec respectively and the surface roughness (Rms) (5μm × 5μm) reaches 0.174 nm, indicating that the GaN epitaxial material has good crystal quality . In addition, the Raman test found that the stress distribution of the entire 4-inch GaN epitaxial material is relatively uniform, with no increase in stress compared to the 3-inch GaN epitaxial material. Through the non-contact Hall measurement, the mobility of two-dimensional electron gas of GaN HEMT material reaches 2 153 cm2 / (Vs), the surface density is 9.49 × 1012 cm-2 and the relative standard deviation of sheet resistance is 1.1% Performance and uniformity.