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通过磨斜角 ,用光致发光法测量了 Ga P:N液相外延 (L PE)材料中 n区和 p区的发光强度。从被测点的荧光谱中可以看出 ,n区和 p区均为发光区域 ,但是在 p- n结两侧氮 (N)浓度大致相同的情况下 ,p区的发光强度明显高于 n区的发光强度 ,约为 n区发光强度的 3～ 5倍。此实验结果表明 ,在 p、n结附近杂质浓度较低情况下 ,Ga P:N绿色发光外延材料中的发光区域主要是在 p区。
The luminescence intensity of n-region and p-region in Ga P: N liquid-phase epitaxy (L PE) material was measured by dip angle. It can be seen from the fluorescence spectrum of the measured point that the n-region and the p-region are light-emitting regions, but the luminescence intensity of the p-region is obviously higher than that of n under the condition that the nitrogen (N) Luminous intensity of the area, about n area luminescence intensity of 3 to 5 times. The experimental results show that the luminescent region in the Ga P: N green luminescent epitaxial material is mainly in the p region under the condition of low impurity concentration near the p and n junctions.