论文部分内容阅读
本文讨论了在转移电子器件中静止畴的四种模式的形成原因、特点及共稳定性。这四种静止畴的模式是:1.畴从阴极产生,向阳极渡越,然后静止在阳极的阴极触发静止畴;2.畴直接也阳极产生,没有渡越,然后在阳极静止的阳极静止畴;3.在外加偏压增高以后,畴展宽到整个样品以后产生的静止畴;4.由于大的非均匀有源区引起的静止畴。前两种模式已有作者报导,后两种模式是本文重点讨论的内容。另外,还对这四种静止畴的稳定性、负阻与频率的依赖关系、开态电流降落及畴承受电压能力等进行了讨论,并作了比较,认为第四种静止畴模式优点较明显。
In this paper, we discuss the formation, characteristics and co-stability of four modes of static domains in transfer electronics. The modes of these four quiescent domains are: 1. The domains are created from the cathode toward the anode and then rest on the cathode of the anode to trigger the quiescent domains. 2. The domains are also directly anodes, not crossed, and then stopped at the anodes Domains; 3. Quiescent domains resulting from the widening of the domain to the entire sample after an increase in applied bias voltage; 4. Quiescent domains due to large, non-uniform active areas. The first two models have been reported by the authors, the latter two models are the focus of this article. In addition, the stability of the four kinds of static domains, the dependence of the negative resistance and the frequency, the on-state current drop and the capacity of the domain withstand voltage are also discussed and compared. The advantages of the fourth kind of static domain mode are obvious .