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基于0.15μm GaAs增强型赝配高电子迁移率晶体管(E-PHEMT)工艺,研制了一款用于5G通信和点对点传输的高性能线性功率放大器单片微波集成电路(MMIC)。采用栅宽比为1∶4.4的两级放大结构保证了电路的增益和功率指标满足要求;基于大信号模型实现了最优输入输出阻抗匹配;采用电磁场仿真技术优化设计的MMIC芯片尺寸为2.5 mm×1.1 mm。芯片的在片测试结果表明,静态直流工作点为最大饱和电流的35%、漏压为5 V的条件下,在9~15 GHz频率内,MMIC功率放大器小信号增益大于20 dB,1 dB压缩点输出功率不小于27 dBm,功率附加效率不小于35%,功率回退至19 dBm时三阶交调不大于-37 dBc。
Based on the 0.15μm GaAs enhanced pseudomorphic high electron mobility transistor (E-PHEMT) process, a high performance linear power amplifier monolithic microwave integrated circuit (MMIC) for 5G communication and point-to-point transmission has been developed. Adopt the two-stage amplifying structure with a gate-to-gate ratio of 1: 4.4 to ensure that the gain and power specifications of the circuit meet the requirements. The optimal input-output impedance matching is achieved based on the large signal model. The MMIC chip optimized by electromagnetic field simulation is 2.5 mm × 1.1 mm. Chip in-chip test results show that the static dc operating point of 35% of the maximum saturation current, the drain voltage of 5 V under the conditions of 9 ~ 15 GHz frequency, MMIC power amplifier small signal gain greater than 20 dB, 1 dB compression Point output power of not less than 27 dBm, additional power efficiency of not less than 35%, power back to 19 dBm third-order intermodulation no greater than -37 dBc.