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报道了控制热处理过程中含氢非晶硅中纳米硅颗粒大小的一种新方法.用喇曼散射、X射线衍射和计算机模拟,发现在非晶硅中所形成的纳米硅颗粒的大小,随着热退火过程中升温速率的变化而变化.在退火过程中,若非晶硅薄膜升温速率较高(～100℃/s),则所形成纳米硅粒的大小在1.6～15 nm;若非晶硅薄膜升温速率较低(～1℃/s),则纳米硅粒大小在23～46nm.根据晶体生长理论,讨论了升温速率的高低与所形成的纳米硅颗粒大小的关系.“,”A new method to control the size of nanoscale silicon that has been grown in thermally annealed hydrogenated amorphous silicon (a-Si:H) films is reported. Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, Found that nanoscale silicon particles can be grown in thermally annealed a-Si:H films and the sizes of the formed silicon particles change with the temperature ramp rate in thermal annealing processes.When the a-Si:H films have been annealed with high ramp rate (～100 ℃/second), the sizes of nanoscale silicon particles are in the range of 1.6～15 nm. In contrast, if the a-Si:H films have been annealed with low ramp rate (～1 ℃/second), the sizes of nanoscale silicon particles are in the range of 23～46 nm. In the light of fractal theory and the theory of crystal nucleation and growth, we have discussed the effect of temperature ramp rate on the sizes of the formed silicon particles.