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通过测试不同旁栅电压条件下的 MESFET沟道电流的低频振荡现象 ,发现旁栅偏压无论朝正向还是负向变化都存在一个阈值可消除此低频振荡 .并从理论上探讨了出现这种现象的原因 ,初步认为这与沟道 -衬底 (C- S)结的特性和高场下衬底深能级 EL2 的碰撞电离有关
By testing the low-frequency oscillation of the MESFET channel current under different side-gate voltages, it is found that there is a threshold value for the bias of the bypass gate to eliminate this low-frequency oscillation, no matter whether it is in the positive or negative direction, and this phenomenon The reason of the phenomenon is preliminarily thought to be related to the characteristics of the channel-substrate (C-S) junction and the impact ionization of the deep level EL2 substrate under high field