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晃动是直拉法硅单晶生长中的常见现象。晃动会导致晶体生长控制系统出现异常,提拉速度波动幅度大,同时还引起熔体对流的不稳定以及杂质微观扩散的紊乱。这不仅对硅单晶的无位错生长造成一定的困难,而且对硅单晶的品质有十分不利的影响。分析了直拉硅单晶生长时晃动的影响因素。利用MATLAB软件及现有振动激励下的单摆动力学模型对CG6000型单晶炉进行单晶晃动的理论计算,理论上分析了各参数变化对单晶晃动的影响。在此基础上提出了改变晶体转速的工艺来控制单晶晃动及晶体形变的方法,并总结了若干减少晶体晃动的措施。
Slipping is a common phenomenon in Czochralski silicon growth. Slippage will lead to abnormal crystal growth control system, pulling rate fluctuations, but also caused the instability of the melt convection and impurity micro-diffusion disorder. This not only causes some difficulties for the dislocation growth of the silicon single crystal, but also has a very unfavorable influence on the quality of the silicon single crystal. The influencing factors of sloshing during the growth of Czochralski silicon were analyzed. The theoretical calculation of single crystal sway of CG6000 single crystal furnace is carried out by using MATLAB software and the single oscillating dynamics model under the existing vibration excitation. The influence of each parameter variation on single crystal sway is theoretically analyzed. On this basis, the method of changing the speed of crystal rotation to control the single crystal sway and crystal deformation is proposed, and some measures to reduce the crystal sway are summarized.