Nano transparent conducting titanium-zinc oxide(Ti-Zn O) thin films were prepared on glass substrates by radio frequency(RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction(XRD), four-probe meter and UV-visible spectrophotometer. The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the(002) crystallographic direction. The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-Zn O sample fabricated with the Ti-doping content of 3%(weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred(002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263×10~(-4), the highest average visible transmittance of 88.8%, the lowest resistivity of 1.18×10~(-3) Ω·cm and the maximum figure of merit(FOM) of 7.08×10~3 Ω~(-1)·cm~(-1). Furthermore, the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content. Nano transparent conducting titanium-zinc oxide (Ti-Zn O) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction (XRD) The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction . The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-Zn O sample fabricated with the Ti-doping content of 3% (weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred (002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263 × 10 -4, the highest average visible t The rammittance of 88.8%, the lowest resistivity of 1.18 × 10 -3 Ω · cm and the maximum figure of merit (FOM) of 7.08 × 10 -3 Ω -1 cm -1. , the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content.