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利用我们研制的常压ＭＯＶＰＥ设备对国产ＴＭＧａ、ＴＭＡｌ、ＴＭＩｎ和ＴＭＳｂ进行了鉴定，为此分别生长了ＧａＡｓ、ＡｌＧａＡｓ、ＩｎＰ、ＧａＳｂ外延层和ＧａＡｓ／ＡｌＡｓ、ＧａＳｂ／ＩｎＧａＳｂ超晶格和ＧａＡｓ／ＡｌＧａＡｓ量子阱结构。表征材料纯度的７７Ｋ载流予迁移率分别达到ＧａＡｓ：μ＿ｎ＝５６６００ｃｍ￣２／Ｖ·ｓ，Ａｌ＿（０．２５）Ｇａ＿（０．７５）Ａｓ：μ＿ｎ＝５１６０ｃｍ￣２／Ｖ·ｓ，ＩｎＰ：μ＿ｎ＝６５３００ｃｍ￣２／Ｖ·ｓ，ＧａＳｂ：μ＿ｐ＝５０７６ｃｍ￣２／Ｖ·ｓ。由１０个周期的ＧａＡｓ／ＡｌＡｓ超晶格结构组成的可见光区布拉格反射器已观测到很好的反射光谱和双晶Ｘ射线回摆曲线上高达±２０级的卫星峰。ＧａＡｓ／Ａｌ＿（０．３５）Ｇａ＿（０．６５）Ａｓ量子阱最小阱宽为１０，在ｌｉＫ下由量子尺寸效应导致的光致发光峰能量移动为３９０ｍｅＶ，其线宽为１２ｍｅＶ。这些结果表明上述金属有机化合物已达到较高质量。
Domestic TMGa, TMAl, TMIn and TMSb were identified by using the normal pressure MOVPE equipment we developed. For this purpose, GaAs, AlGaAs, InP and GaSb epitaxial layers and GaAs / AlAs, GaSb / InGaSb superlattices and GaAs / AlGaAs Quantum well structure. The carrier mobility at 77K for the characterization of the materials reaches GaAs: μ_n = 56600 cm 2 / V · s, Al 0.25 Ga 0.75 (0.75) As: μ_n = 5160 cm 2 / V · s, μ_n = 65300 cm 2 / V · s, GaSb: μ_p = 5076 cm 2 / V · s. The Bragg reflector in the visible region consisting of a 10-period GaAs / AlAs superlattice structure has been observed to have good reflectance spectra and satellite peaks up to ± 20 orders on the bimodal X-ray sway curve. The minimum well width of the GaAs / Al_ (0.35) Ga_ (0.65) As quantum well is 10, and the photoluminescence peak energy shift due to quantum size effect at liK is 390 meV with a linewidth of 12 meV. These results show that the above metal organic compounds have reached a higher quality.