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第三代红外成像技术需要高性能的大规格红外焦平面列阵。HgCdTe红外焦平面列阵所呈现的性能可满足这种要求。基于硅的复合衬底已被证明是实现高分辨率HgCdTe列阵的首选衬底。复合衬底的工艺技术具有可量测性,目前使用的衬底尺寸已达6in,而且具有极好的组分均匀性。代表目前工艺水平的复合衬底所呈现的位错密度处于中低档范围,即10~5cm~(-2)。然而,在复合衬底上生长的HgCdTe外延层所呈现的缺陷密度为10~6cm~(-2)。最近在CdSeTe/Si复合衬底方面的研制工作表明,这种衬底很有希望与HgCdTe合金达到更好的晶格匹配。可以预见,若能进一步提高材料质量并改进器件结构,那么实现基于HgCdTe的可量测的工艺技术是完全可能的。
The third generation of infrared imaging technology requires high-performance large-format infrared focal plane array. HgCdTe infrared focal plane array performance presented to meet this requirement. Silicon-based composite substrates have proven to be the substrate of choice for high-resolution HgCdTe arrays. The process technology of the composite substrate is scalability and the substrate size currently used has reached 6 in. And has excellent compositional uniformity. The dislocation density presented by the composite substrate representing the current technological level is in the mid-low range, that is, 10 ~ 5cm ~ (-2). However, the HgCdTe epitaxial layer grown on the composite substrate exhibits a defect density of 10-6 cm -2. Recent work on CdSeTe / Si composite substrates has shown that this substrate is promising for better lattice matching with HgCdTe alloys. It is foreseeable that to further improve the material quality and improve the device structure, it is entirely possible to realize a measurable process technology based on HgCdTe.