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报道了一种采用 U HV/CVD锗硅工艺和 CMOS工艺流程在 SOI衬底上制作的横向叉指状 Si0 .7Ge0 .3/Si p- i-n光电探测器 .测试结果表明 :其工作波长范围为 0 .7～ 1.1μm,在峰值响应波长为 0 .93μm,响应度为 0 .38A/W.在3.0 V的偏压下 ,其暗电流小于 1n A,寄生电容小于 1.0 p F,上升时间为 2 .5 ns.其良好的光电特性以及与 CMOS工艺的兼容性 ,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试 ,在高速光信号探测等应用中有一定的价值
A lateral interdigitated Si0.7Ge0.3 / Si p-in photodetector fabricated on a SOI substrate by a U HV / CVD germanium-silicon process and a CMOS process is reported.The test results show that the operating wavelength range is 0 .7 ~ 1.1μm, with a peak response wavelength of 0.93μm and a responsivity of 0.38A / W. With a bias voltage of 3.0 V, the dark current is less than 1n A, the parasitic capacitance is less than 1.0 p F, and the rise time is 2 .5 ns. Its good optoelectronic properties and compatibility with CMOS processes provide a new attempt to develop high speed, low operating voltage silicon-based optoelectronic integrated devices that can operate effectively in near-infrared light. High-speed optical signals Detection and other applications have a certain value