采用变温傅里叶变换衰减全反射红外光谱法(ATR-FTIR),在313~393K温度范围内,分别研究了α-氮化硅和β-氮化硅分子结构的红外一维光谱、红外二阶导数光谱和红外四阶导数光谱,并针对氮化硅Si-N伸缩振动,利用二维相关红外光谱考察了温度变化对氮化硅分子结构的影响。结果表明:在波数950~850cm~(-1)范围内,氮化硅主要存在着Si-N伸缩振动模式(νSi-N)。随着测定温度的升高,α-氮化硅νSi-N红外吸收强度的变化顺序为874cm~(-1)>886cm~(-1)>880cm~(-1),而β-氮化硅νSi-N红外吸收强度的变化顺序为876cm~(-1)>880cm~(-1)>890cm~(-1)。 ATR-FTIR was used to study the infrared one-dimensional spectra of α-silicon nitride and β-silicon nitride in the temperature range of 313 ~ 393K. Order derivative spectra and infrared fourth-order derivative spectra. The influence of temperature on the molecular structure of silicon nitride was investigated by two-dimensional correlation infrared spectroscopy for the Si-N stretching vibration of silicon nitride. The results show that Si - N stretching vibration mode (νSi-N) mainly exists in silicon nitride in the wave number of 950 ~ 850cm ~ (-1). With the increase of the measured temperature, the order of variation of infrared absorption intensity of α-silicon nitride νSi-N is 874cm -1> 886cm -1> 880cm -1, while the β-silicon nitride The order of variation of νSi-N infrared absorption intensity is 876cm -1> 880cm -1> 890cm -1.