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对含净杂质浓度(N_D-N_A)高于7×10~(16)cm~(-3)的补偿掺砷锗进行了电离杂质密度的分析。霍尔分析和二次离子质谱含杂相对量的分析结果与在霍尔迁移率峰值温度下的电离杂质密度分析结果相一致,证实 Brooks-Herring 电离杂质散射迁移率分析式,对于高浓度补偿掺砷锗的分析仍是适用的。最佳分析温度因杂质浓度而有所差异,不宜简单采取两个温度(如300K 和77K 两个温度点)测量法,应取测量迁移率出现峰值的温度为最佳分析温度。
The ionization impurity density was analyzed for arsenic-doped germanium with a net impurity concentration (N_D-N_A) higher than 7 × 10 ~ (16) cm -3. The analysis results of the relative abundances of Hall and secondary ion mass spectrometry are consistent with those of the ionization impurity density at the peak temperature of the Hall mobility and confirm that the Brooks-Herring scattering impurity scattering mobility analysis shows that for the high-concentration compensating doping Analysis of arsenic and germanium is still applicable. The best analysis of the temperature due to impurity concentrations vary, not simple to take two temperature (such as the two temperature points 300K and 77K) measurement should be taken to measure the mobility of the peak temperature for the best analysis of temperature.