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使用低介电常数基板和高电导率、高抗电迁移的金属Cu进行布线,可以提高高密度电子封装的传输速度和可靠性。采用乙酰丙酮铜作为前驱体,在常压下利用化学气相沉积技术对玻璃陶瓷基板进行Cu薄膜金属化。利用热重分析、X射线衍射和扫描电子显微镜等技术对前驱体、Cu薄膜进行分析观察。结果表明:影响Cu导体的电阻的主要因素是沉积温度。在温度为290～310℃,N2气流量为200～350mL/min和H2气流量为450～600mL/min的条件下,获得了致密的Cu薄膜,Cu导体方块电阻为25mΩ。
The use of a low dielectric constant substrate and high electrical conductivity, high resistance to migration of metal Cu for wiring, can improve the high-density electronic package transmission speed and reliability. Using copper acetylacetonate as a precursor, the glass ceramic substrate is subjected to Cu film metallization by chemical vapor deposition under normal pressure. Thermogravimetric analysis, X-ray diffraction and scanning electron microscopy were used to analyze the precursor and Cu films. The results show that the main factor affecting the resistance of Cu conductor is the deposition temperature. The dense Cu thin film was obtained at a temperature of 290 ~ 310 ℃ with an N2 flow rate of 200 ~ 350mL / min and an H2 gas flow rate of 450 ~ 600mL / min. The sheet resistance of Cu conductor was 25mΩ.