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采用 MOCVD 技术在 SiC 衬底上制备了 AlGaN 同质和异质 pn 结,AlGaN 层中 AlN 浓度为2～8mol%,反应离子刻蚀形成台面结构。研究了 AlGaNpn 结的电致发光谱(EL),探测到了 AlGaN 中与导带跃迁有关的 EL 峰。从 p-Al_(0.08)GaN_(0.92)/n—Al_(0.06)Ga_(0.94)N 异质结中测得 EL 峰的最小波长约为348nm(hv 约为3.56eV 300K),并得出了 EL 峰值边缘的光子能量与 AlGaN 中 AlN 浓度的关系。
AlGaN homogenized and heterogeneous pn junctions were fabricated on SiC substrate by MOCVD. The concentration of AlN in AlGaN layer was 2 ~ 8mol%, and reactive ion etching was used to form mesa structure. The electroluminescence spectra (EL) of AlGaNpn junctions were investigated and the EL peaks associated with the conduction band transitions were detected in AlGaN. The minimum wavelength of the EL peak measured from the p-Al_ (0.08) GaN_ (0.92) / n-Al_ (0.06) Ga_ (0.94) N heterojunction is about 348 nm (hv is about 3.56 eV 300K) Relationship between Photon Energy at EL Edge and AlN Concentration in AlGaN.